DOI: 10.1109/TMTT.2026.3672011   IEEEXplore: https://ieeexplore.ieee.org/document/11442814

Wideband distributed downconverters in 70 nm and 100 nm AlGaN/GaN HEMT technology in both drain-pumped and gate-pumped, resistive single-ended topologies.

50-150 GHz (up to D-band)

A physics-based advanced SPICE model for the GaN HEMTs has been extended with a more precise model of the influence of velocity saturation and channel-length modulation (CLM) for both drain current and intrinsic capacitances, and a cross- coupling (CC) capacitances model, to improve low-voltage mixer simulations up to at least D-band frequencies.

Wireless communication systems with high data rates up to D-band.

For all downconverter designs: 9 dBm LO power, 50-150 GHz bandwidth, >10 dB LO-RF isolation. For the 70 nm drain-pumped design: -8.3 ±1.8 dB conversion gain (CG), -1 dB compression point (P-1dB) of 2 dB, 0 W power consumption. For the 70 nm gate-pumped design: -10.7 ±1.0 dB CG, 10 dB P-1dB. For the 100 nm drain-pumped design: -9.1 ±1.8 dB CG, 3 dB P-1dB. For the 100 nm gate-pumped design: -11.2 ±1.2 dB CG, 9 dB P-1dB.