DOI: 10.1109/TMTT.2026.3718544   IEEEXplore: https://ieeexplore.ieee.org/document/11642602    

Ultracompact sub-30-ps metastructured SPDT high-power-handling switch on a high electron mobility InAlN/GaN platform.

20 – 67 GHz

The device-level approach to high power switching is based on electrical metastructures on GaN to efficiently couple periodically patterned terminals through a 2-D electron gas (2DEG). Electrical control of the 2DEG carrier density determines the spatial flow of microscopic currents within the switch layout, and operates the switch ON or OFF. The epitaxial stack includes a InAlN barrier layer, capped with a GaN top layer and underlaid with a AlN spacer. Schottky contacts on all terminals were formed by lift-off patterning of a Ni film, selected for its high work function and favorable adhesion properties.

Highly integrated millimeter-wavefront ends such as phased-array transceivers, T/R modules, antenna-switching networks, and beamforming arrays.

1.8 dB insertion loss and 20 dB isolation at 40 GHz; insertion loss improves 1.7 dB at 67 GHz. 22.2 dBm 1-dB compression point (IP1dB), 35.4 dBm third-order intercept point (IIP3) at 30 GHz. < 30 ps switching time; ~1.3 kW/mm2 power density.