A 200-GHz High-Compression, Coupled-Line Common-Base Mixer in 90-nm SiGe Technology
Abstract
This letter presents a novel fundamental downconverting mixer topology for millimeter-wave (mm-Wave) applications operating beyond fmax/2 . The proposed work achieves high-compression via the use of a cascaded common-base (CCB) gain stage and a novel coupled-line coupler (CLC)-based switching stage, with triaxial balun-based matching networks at the RF and local oscillator (LO) ports. This architecture is implemented in a 90-nm silicon-germanium (SiGe) BiCMOS process technology with an fT/fmax of 340/410 GHz and achieves a state-of-the-art IP1dB of −3 dBm and 4.4 dB conversion gain across an operating frequency range of 188–226 GHz, while only consuming 111 mW of DC power under saturated LO drive.
https://ieeexplore.ieee.org/document/11421350 DOI: 10.1109/LMWT.2026.3667449