A 10-GHz self-synchronous MMIC power rectifier (PR) is designed and fabricated in the WIN Semiconductors NP12 120-nm GaN-on-SiC process. When the gate is terminated with a load-pull tuner, the rectifier demonstrates a peak RF-DC conversion efficiency of 61% with 33-dBm input RF power at 10.25 GHz. To implement the tuner function on-chip, an X-band MMIC tunable load is designed in the WIN Semiconductors PQG3-0C 150-nm GaAs process and hybridly integrated in the gate circuit of the rectifier. A maximum conversion efficiency of 59% with 32-dBm input RF power at 10.5 GHz is measured when the rectifier MMIC is connected to the tunable load MMIC.

https://ieeexplore.ieee.org/abstract/document/11407971 DOI: 10.1109/LMWT.2026.3663916