TC-9 Microwave and Millimeter-Wave Solid State Devices Committee

Mission Statement

The mission of MTT-9 Microwave and Millimeter-Wave Solid-State Devices is to monitor the developments in both the emerging and the technologically significant solid-state device technologies for microwave and/or millimeter-wave applications; plan and coordinate the activities of the IEEE MTT Society by cooperating with other Technical Committees to promote the dissemination and sharing of technical knowledge in those areas. The committee consists of MTT-S and related society members from academia, government, and industry with significant expertise in those technologies.

The committee interests span a wide range of devices, including active and passive devices; two-, three-, and multi-terminal devices; discrete and IC-embedded devices; lumped and distributed devices; semiconductor as well as other (non-semiconductor) devices, excluding only those devices (such as ferrite and superconducting) which are within the domain of other MTT Society technical committees.

The MTT-9 committee concerns itself with all significant aspects of engineering the devices, including their design, layouts, optimization, and tradeoffs; modeling, simulation, testing, and characterization; characteristics, performance, and applications; reliability, failure mechanisms and lifetimes; parasitics, packaging, and electrical or thermal requirements; sensitivity to operating conditions or environment, such as temperature, nuclear radiation, and magnetic field; control via optical excitation, mechanical stress, and external fields; quality control, reducibility, and cost; and the history, evolution, future prospects, and fundamental limitations.

Field of Interest

* Active and passive semiconductor devices
* Discrete and IC-embedded devices
* Device modelling and parameter extraction

Focusing technologies

The committee covers solid-state device technologies for microwave and/or millimeter-wave applications.

* Si, III-V, large bandgap, and others
* bipolar, CMOS, FET, HEMT, and others
* two-, three-, and multi-terminal devices
* devices for specific circuits (power amplifiers, low-noise amplifiers, mixers, oscillators, etc.)
* devices for specific applications (ultra low power, ultra high power, ultra high speed, cutting edge of CMOS device, etc.)


TC-9 Activities at Upcoming IMS 2023
TC-9 Activities at Upcoming IMS 2023

Workshop on June 11st, 2023 WSL: State-of-the-Art Millimeter-Wave GaN Transistor and MMIC Technologies and Future Perspective Organizers: Farid Mejdjoub (CNRS – IEMN) / Keisuke Shinohara (Teledyne Scientific & Imaging) Owing to superior electrical and thermal properties of GaN-on-SiC material systems, a tremendous progress has been made on GaN-based transistor and MMIC technologies. Advanced heterostructure material […]

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TC-9 Supported Workshops at IMS 2022
TC-9 Supported Workshops at IMS 2022

Workshop on June 19th, 2022 WSD: Micro and Nano Technology Challenges to Address 6G Key Performance Indicators Organizers: Didier Belot (CEA-LETI) / Wolfgang Heinrich (FBH) Telecom communities are beginning to prepare the next generation of mobile telecom, the 6G, and present KPIs going to the Tbps, 300GHz carrier frequency, space multiplexing, spectrum agility, dense Massive […]

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Workshop EuMW2019 - Real Amplifier Devices for 5G New Radios
Workshop EuMW2019 - Real Amplifier Devices for 5G New

Date: Sept 29th – Paris – Porte de Versailles Session: WS – 04 Chair/Vice-Chair: Kazutaka Inoue / Kazuya Yamamoto Abstract: Various RF front-end technologies based on GaN, Si-CMOS etc. for 5G new radios (NRs) base stations have been discussed in major conferences up to now. Now, the 3GPP has announced that 5G standards have been […]

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