Yoshitaka Niida

Yoshitaka Niida received the B.S., M.S., and Ph.D. degrees in physics from Tohoku University, Sendai, Japan, in 2005, 2009, and 2012, respectively. He joined Fujitsu Laboratories Ltd., Atsugi, Japan, in 2012 and was engaged in the research and development of gallium nitride (GaN) high-electron-mobility-transistor (HEMT) high-power amplifiers. In 2021, he joined Sony Semiconductor Solutions Corporation. Since 2025, he has been with the Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., where he is currently engaged in the research and development of GaN-based power amplifiers. His current research interests include the design, characterization, and fabrication of GaN power amplifiers, RF performance evaluation of next-generation GaN HEMT technologies, and the study of transient and trapping phenomena in GaN HEMTs.