Yi-Ching Pao (S’82-M’82) received the B.S. degree in electrophysics from National Chiao-Tung University in 1981 and the M.S.E.E. degree from Pennsylvania State University in 1983. His major studies were in the area of solid-state theory and device physics. In 1983, he joined Varian Associates, 111-V Device Center, Santa Clara, CA, where he is currently engineering manager of the MBE operation and low-noise HEMT program. His research has dealt with the development of GaAs/AlGaAs and InAIAs/InGaAs/InP processes, MBE material growth, and high electron mobility transistor designs. Mr. Pao has authored or coauthored more than 35 papers in the fields of MBE and high-speed devices. He is currently working toward the Ph.D. degree at Stanford University under the honors co-op program. He is a member of Sigma Xi.