Dr. Gabriele Formicone graduated in Physics at the University of Rome “La Sapienza” (Italy), and obtained the Ph.D. in Electrical Engineering from Arizona State University in Tempe, AZ, USA. He has 20+ years of industry experience in the design and characterization of Silicon and GaN RF/Microwave power transistors. Dr. Formicone has worked for Motorola/Freescale (now NXP) from 1997 to 2005 and has been with Integra Technologies, Inc. since then, where he is Director of Technology and Innovation. He has co-authored several articles on RF & MW Solid-State Power Amplifier Technology in IEEE MTT-S and EuMA sponsored conferences. Dr. Formicone is IEEE Senior Member, EuMA member and (part-time) faculty associate at Arizona State University in the Department of Electrical Engineering.