Workshops

IMS 2015 WORKSHOPS

Direct Extraction of FET Circuit Models from Microwave and Baseband Large-Signal Measurements for Model-Based Microwave Power Amplifier Design

Organizers:

Patrick Roblin, The Ohio State University
David E. Root, Keysight Technologies

Abstract:

Leveraged by the availability of nonlinear vector network analyzers (NVNA), the efficient extraction of circuit-based FET models including memory effects directly from large-signal microwave measurements is now possible and has been successfully demonstrated. There is now a comprehensive body of work published on this emerging topic. This workshop will bring together many of the world experts in this field to present the results already demonstrated by this new approach and outline the outstanding challenges remaining ahead. This workshop will start with a review of the progress in the field, and include tutorials on key extraction topics. The focus of this workshop is to report on advanced techniques for the extraction and validation of circuit-based device-models using large-signal microwave measurements with NVNAs. Model-based nonlinear embedding design technique that enables efficient power amplifier (PA) designs starting from a desired intrinsic PA mode will also be reviewed as an emerging application.,As wireless communication keeps expanding and various RF front end technologies are competing for these new markets, continuing challenges are arising for the development of circuit-based device models for power microwave field-effect transistors (FET) that are able to predict the device performance under realistic large-signal operating conditions. Specifically, device models must account for the actual device response when the FETs are excited by modulated RF communication signals exhibiting a high peak to average power ratio. Under such conditions some memory effects such as (1) self-heating and (2) traps in GaN HEMTs, which are intermittently activated by high instantaneous voltages, are observed to profoundly modify the device performance at low average power.,Circuit-based device models based on a physical topology remain of great importance as they provide the means to monitor the load-lines at the current-source reference planes in order to verify the transistor’s mode of operation in power amplifiers (PA). They also play an essential role in the promising model-based nonlinear embedding design technique that enables efficient design starting from a desired intrinsic PA mode. However, reasonable, accurate and realistic models are required for successful model-based PA design. Given the high peak to average power ratio of modern RF communication signals, various low-frequency memory effects (self-heating, trapping) are known to be excited by intermittent high instantaneous voltages at peak power. These memory effects can in turn substantially modify the subsequent response of the device under large-signal operation at average power. Much effort has been placed in finding new ways to efficiently characterize and model these effects. This includes direct model extraction from (1) modulated large-signal microwave measurements with NVNAs and (2) various low-frequency large-signal measurement techniques. This workshop will review these various advanced measurement and modeling techniques for the efficient extraction of realistic transistor models as well as present examples of application to power amplifier design.

Agenda:

  1. Direct extraction of nonlinear FET IV and QV functions from time-domain large-signal measurements
    Paul Tasker – Cardiff University, Cardiff UK
  2. Parasitic extraction and the intrinsic-element bias-dependence of GaN devices
    Apolinar Reynoso-Hernandez – CICESE, Baja de California, Mexico
  3. Extraction of FET nonlinear models by the dynamic-bias measurement technique
    Dominique Schreurs – K. E. Leuven, Belgium
  4. Extraction of ANN model for SOS MOSFET from real-time active-load-pull measurements
    Patrick Roblin – The Ohio State University, Columbus, OH
  5. Advanced GaN and GaAs transistor evaluation and transistor modeling using combined small- and large-signal VNA & NVNA microwave measurements
    Iltcho Angelov – Chalmers University of Technology, Sweden
  6. NVNA-based artificial neural network (ANN) model generation for III-V FETs including traps and thermal memory effects: DynaFET
    David E. Root – Keysight Technologies, Santa Rosa
  7. Self-heating and trap characterization and simulation for large signal GaN transistor modeling
    Raymond Quéré – XLIM Institut de Recherche, Limoges, France
  8. Characterization of Dynamic Intrinsic Cells for Scalable FET Circuit Models
    Antony Parker – Macquarie University, Sydney

 

IMS 2016 WORKSHOPS

Large Signal Network Analysis: From Instrumentation Architectures to Software Applications for Your RF Design Flow Improvement

Organizers:

Tibault Reveyrand, The Ohio State University
Antonio Raffo, University of Ferrara

Abstract:

This workshop focuses on large signal network analysis. This approach, more challenging than small-signal characterization, is a prime importance in the optimized design of RF circuits. The workshop addresses the instrumentation hardware architectures and the software tools that can solve high-efficiency linear amplification on various topologies (envelope tracking, Doherty, Outphasing transmitters,…). Instrumentation down-conversion is based on mixers (VNAs and VSAs), sub-samplers or tracking-and-hold amplifiers. Application tools include the last advancements on compact/behavioral modeling at transistor level but also on the methods to improve efficiency of your RF transmitter design thanks to waveform engineering. RF models and methods accuracy are upgraded by adding low-frequency dynamic characteristics of transistors. Design flow will be presented for a very large set of examples: from instrumentation, to transistors levels characterization (GaAs, GaN) up to complex architectures such as very high power amplifier for base station, Doherty, Outphasing and Varactors. The advantages of the large signal network analysis will be clearly illustrated and demonstrated.

Agenda:

  1. Circuit-Based Transistor Modeling and Nonlinear Design using LSNA/NVNA Measurements
    Patrick Roblin – Ohio State University
  2. A tour in the realm of vector-calibrated LSNA measurements: from low- to high-frequency, from characterization to design
    Gustavo Avolio – University Catholiqué de Louvain; Antonio Raffo – University di Ferrara; Giorgio Vannini – University di Ferrara; Dominique Schreurs – University Catholiqué de Louvain
  3. Breakthrough in Wideband and High Resolution Calibrated Time Domain RF Measurement
    Denis Barataud – University of Limoges
  4. Use of Nonlinear Vector Network Analyser Measurements in the development of GaN on Silicon for BTS applications
    Lyndon Pattison – MACOM; David Runton – MACOM; Andrew Patterson – MACOM
  5. Advances in NVNA-based transistor characterization and modeling: Scalable X-parameter models, time-domain compact models, and new large-signal device measurements
    David Root – Keysight Technologies
  6. NVNA measurements for high efficiency RF PA designs
    Tony Gasseling – AMCAD Engineering; Christophe Mazière – AMCAD Engineering
  7. Design-oriented measurements of high-efficiency PAs for high PAR using an NI-based platform
    Zoya Popovic – University of Colorado; Tibault Reveyrand – University of Colorado
  8. Characterization of advanced transmitter components using non-conventional LSNA measurements
    Mattias Thorsell – Chalmers University of Technology; Christer Andersson – QAMCOM; Sebastian Gustafsson – Chalmers University of Technology; David Gustafsson – Ericsson; Christian Fager – Chalmers University of Technology
  9. Accelerating the design of high-efficiency power amplifiers using adapted measurement techniques
    Marc Vanden Bossche – National Instruments Corporation

 

MM-Waves Measurement Needs for 5G

Organizers:

Nuno Carvalho, Instituto de Telecomunicacoes,
Jon Martens, Anritsu

Abstract:

5G is the next big step on wireless communications. Several proposals are moving this technology to millimeter wave solutions, which will allow to increase significantly the bandwidth and bitrate levels. Nevertheless not only several transceiver design strategies should be discussed but also new characterization techniques should be adapted for this frequency band. In this workshop several strategies for 5G transceiver design will be addressed first with a group of industry and academic groups presenting their new designs, and will be followed by a strong discussion on characterization, instrumentation and measurement techniques, specially focused on millimeter wave signals that would be used on 5G applications. In this scenario industry and R&D laboratories will discuss this issue carefully.

Agenda:

  1. Metrology Issues for 5G
    Kate Remley – NIST
  2. Millimeter-waves for 5G and Evolving Measurement Needs
    Debabani Choudhury – Intel Corporation
  3. Practical Aspects and Considerations for High Instantaneous Bandwidth, High Data Rate, Millimeter Wave Wireless Characterization and Test Systems
    Justin Magers – National Instruments Corporation
  4. Linearity topics in wideband modulated mm-wave measurements
    Jon Martens – Anritsu
  5. 5G communication systems at mm-wave frequencies and their consequences for hardware design
    Rik Jos – Ampleon
  6. Mmwave Antenna and 5G Testbed characterization
    Ilja Ocket – KU Leuven; Sofie Pollin – KU Leuven
  7. Toward 5G Measurement: How the Modern VNA will help
    Andrea Ferrero – Keysight Technologies

 

IMS 2017 WORKSHOPS

New Developments in Microwave Measurements for Planar Circuits and Components

Organizers:

Matthias Ohlrogge, Fraunhofer IAF
Uwe Arz; Physikalisch-Technische Bundesanstalt (PTB)

Abstract:

High-frequency on-wafer measurement techniques are fundamental prerequisites for many applications in science, engineering and metrology. While reliable planar measurements up to millimetre-wave frequencies are becoming more and more state-of-the-art, the traceability in an industrial characterisation process, planar S-parameter measurements of nano-devices and the extension to frequencies beyond 100 GHz are still open topics to the scientific and industrial community. Therefore the aim of this workshop is to provide an overview of these current research areas and to present future directions in the field of planar on-wafer measurements. The first part of this workshop is therefore related to the fundamental question of how to achieve traceability in planar on-wafer measurements. More specifically, this means we will discuss the characterization and verification process of different error mechanisms in a planar on-wafer environment. The second part of the workshop is linked to the measurement of nano-electronic devices. Since these components are rapidly finding their way into the field of millimetre and sub-millimetre wave frequencies, we are facing even more the difficulty of how to perform reliable RF measurements on such devices. This includes issues such as the impedance mismatch problem or the challenge of probing at nanoscale dimensions. Besides the complexity regarding the measurement of nano-devices, reliable on wafer measurements at sub-millimetre frequencies are nowadays getting increasingly important. At these high frequencies one faces the problem of crosstalk phenomena and excitation of higher order modes. These relevant topics together with future thoughts on how to solve them shall be covered in the third part of this workshop. To summarize the workshop and get a broad feedback on potential future topics we will initiate a round table discussion at the end. At this point everybody will have the opportunity to interact with the speakers more closely than in the short discussions after each talk.

Agenda:

  1. Traceability for Large-Signal On-Wafer Measurements
    Dylan F. Williams – NIST
  2. On-Wafer Measurements with VNA Tools II
    Johannes Hoffmann – Eidgenössisches Institut für Metrologie METAS; Michael Wollensack – Eidgenössisches Institut für Metrologie METAS; Juerg Ruefenacht – Eidgenössisches Institut für Metrologie METAS
  3. Precision and Reproducible On-Wafer Measurement at Millimeter-Wave and THz Frequency
    Masahiro Horibe – National Metrology Institute of Japan
  4. Wafer-Level Calibration, Measurement and Measurement Uncertainties at the mm-Wave Frequency Range
    Andrej Rumiantsev – MPI Corporation
  5. On-Wafer Characterization of Nano-electronic Devices and Nanomaterials
    Mitch Wallis – NIST; Pavel Kabos – NIST
  6. Near-Field Scanning Millimeter-Wave Microscope Combined With a Scanning Electron Microscope
    Kamel Haddadi – Institut d’Electronique de Microélectronique et de Nanotechnologie
  7. Benefits and Obstacles of Planar On-Wafer Measurements at Submillimeter Frequencies
    Matthias Ohlrogge – Fraunhofer IAF
  8. Design, Characterization and Evaluation of TRL Calibration Kits Integrated Using Silicon Based Technologies
    Marco Spirito – Delft University of Technology
  9. Modeling Conductor Surface Roughness
    Gerald Gold – Friedrich-Alexander University Erlangen-Nürnberg

 

RF to/from Bits: Challenges in High Frequency Mixed Signal Measurements and Design

Organizers:

Jon Martens, Anritsu;
Nuno Carvalho, IT-Universidade de Aveiro

Abstract:

With higher levels of integration and ever higher bandwidth requirements in communications, telemetry and control systems, mixed signal measurements and behaviors in these systems involving data converters are increasingly important. Receiver chains must manage wide bandwidths and not introduce added distortions through data conversion, predistorters must correctly digitize and process transmitter behaviors at sufficient speed with a minimum of added transfer errors, and digital transmitters must control detailed spectral purity requirements. Characterization of systems like these must handle a mixed-domain calibration space and detail a complicated multivariate problem where converter clocks can play an even greater role than do front end local oscillators. This workshop will cover this category from a number of viewpoints to highlight some approaches to distortion management/characterization, managing details of converter behavior and better understanding performance of these complex systems.

Agenda:

  1. How Not to Mess-Up the Bits When Converting Them to and From Microwave Signals
    Justin Magers – National Instruments
  2. Mixed-Signal Characterization Approaches for 5G Software Defined Radio Design
    Nuno Carvalho – IT-Universidade de Aveiro
  3. System-Level Design Considerations for Digital Predistortion of Wireless Base Station Transmitters
    John Wood – Obsidian Microwave
  4. Modeling RF Complex Circuits for Accurate System Simulation
    Damien Gapillout – AMCAD Engineering; Christophe Maziere – AMCAD Engineering

 

Novel 5G Applications of Nonlinear Vector Network Analyzer for Broadband Modulation and Millimeter Wave Characterization

Organizers:

Patrick Roblin, The Ohio State University;
Apolinar Reynoso-Hernandez, CICESE

Abstract:

The world’s thirst for communication keeps on increasing as users are attracted to new broadband services for accessing data on the cloud, video-conferencing, and streaming videos using various user equipment. This growing demand for higher data rates (>=6 Gpbs) is motivating vigorous research activities worldwide on the development of wideband and multiband systems above and below 6 GHz. The fifth generation (5G) of wireless standards are being developed for cellular communication by 3GPP to directly address these issues. This workshop will focus on new 5G applications of nonlinear vector network analyzers (NVNAs) including: (1) Vector signal analysis for measuring with a high dynamic range, modulated signals with very large bandwidth (multiple GHz). (2) The characterization of millimetre transistors which includes the impact of large-signal cyclo-stationary memory effects in CW mm-wave small-signal response. (3) Newly supportive phase references and phase-calibration techniques for NVNAs permitting the full characterization of RF PAs under various wideband and multiband excitations. With the development of these novel measurement techniques, new challenges in behavioral & circuit modeling of devices for broadband modulated multi-harmonic excitations must also be addressed. This includes characterizing and modeling the mutual coupling between the elements of the massive MIMO active antenna array and the associated dynamic load modulation it induces. Also the mixed-signal instrumentation and measurement approaches needed to characterize software defined radio and digital radio front ends for the new 5G communication paradigm will be presented together with the application of D-parameters to mixed-signal integrated solutions for 5G. This workshop will bring together some of the leading world experts in the field to present both these novel measurement techniques and associated emerging behavioral modeling techniques.

Agenda:

  1. NVNA for Accurate DUT Measurements With Wideband Repetitive Modulated Signals
    Jean-Pierre Teyssier . Keysight Technologies
  2. Dynamic-Bias Measurements for Microwave and mm-Wave Transistor Characterization: A Step Further
    Dominique Schreurs – K.U. Leuven; Gustavo Avolio – K.U. Leuven; Antonio Raffo – University of Ferrara
  3. Millimeter-Wave Multi-GHz-IF Receivers: Linearity and Correction Considerations
    Jon Martens – Anritsu
  4. Dense-Spectral-Grid Multi-Band NVNA Measurement for Characterizing RF PA Inter-Modulation and Harmonic Nonlinearities
    Yichi Zhang – National Institute of Metrology
  5. Review of Broadband Behavioral Modeling and Linearization Techniques for 5G
    Patrick Roblin – The Ohio State University; Meenakshi Rawat – ITT Roorkee
  6. Robust Digital Predistortion Method Based on Dynamic X-Parameters
    Jan Verspecht – Keysight Technologies
  7. Challenges for Nonlinear Memory Characterization and Modeling in Broadband PA Applications
    Edouard Ngoya – XLIM, University of Limoges; Damien Gapillout – XLIM, University of Limoges; Sebastien Mons – XLIM, University of Limoges
  8. NVNA Measurements for 5G Active Antenna Array Behavioral Modeling
    José Carlos Pedro – Universidade de Aveiro; Filipe Barradas – Universidade de Aveiro; Telmo Cunha – Universidade de Aveiro
  9. Enabling 5G Digital Communications Using D-Parameters
    Nuno Borges Carvalho – Universidade de Aveiro

 

Plug and Play S-Parameter Measurements and Models for Broadband Interconnects

Organizers:

Mike Resso, Keysight Technologies;
Heidi Barnes, Keysight Technologies

Abstract:

This workshop will provide an industry perspective on interconnect issues with reference plane placement and the subsequent impact on achieving high quality broadband s-parameter measurements and models. An overview will be provided from the historical challenges of the simple coaxial connector to understanding the latest in low power, high density, high speed interconnects for the Internet-of-Things (IOT). This IOT industry is rapidly moving towards new standards, such as the USB Type-C reversible interconnect that runs at 10Gb/s data rates creating microwave frequencies and is capable of 100 watts of power all in a PCB footprint that is smaller than a single edge launch SMA to PCB connector. Ensuring error free data transmission requires the ability to plug and play s-parameter models of various components for design exploration, turn-on debug, and compliance verification. Measurement calibrations and simulation reference planes need to pay careful attention to the definition and location of the s-parameter reference planes to insure the accuracy when cascaded in a full channel simulation across both time and frequency domains. Adding to the complexity is the high density coupling and crosstalk for signal integrity applications and the extremely low impedances on the power integrity side. This special session will include worldwide expertise in these engineering disciplines as well as academia to provide practical tips and techniques for measuring and modeling interconnects with custom calibration and simulation reference planes.

Agenda:

  1. Printed Circuit Boards: The High Speed Electrical Interconnect of the Future
    Brett Grossman – Intel
  2. Ideal Reference Plane for USB Type C Plug and Play S-Parameters
    Heidi Barnes – Keysight Technologies; Mike Resso – Keysight Technologies
  3. Verifying De-embedding Processes With Plug and Play Separable Test Boards
    Eric Bogatin – Bogatin Enterprises; Mike Resso – Keysight Technologies
  4. The “Connector Effect” and its Impact on High Frequency Measurement Accuracy and Repeatability
    Ken Wong – Keysight Technologies
  5. Challenges of Using S-Parameters in Multigigabit Serial Links
    Howard Heck – Intel
  6. Test Connector Interfaces Supported by Test Equipment Companies
    Bill Rosa – Signal Microwave
  7. Power Integrity Low ESR Measurements and Simulation
    Steven Sandler – PicoTest

 

IMS 2018 WORKSHOPS

Advanced Applications of Nonlinear Vector Network Measurements for broadband RF Power Amplifiers Design and Linearization

Organizers:

Karun Rawat, Indian Institute of Technology Roorkee, India;
Patrick Roblin, Ohio State University, USA

Abstract:

With the advent of 5G communication era, there is huge upcoming requirement of high data rate for supporting heterogeneous network. The key requirement such as spectrum efficient modulation schemes, multiple access techniques and carrier aggregation etc. are under investigation to handle spectral as well as energy efficient radio transmission. In particular, the radio frequency (RF) and microwave power amplifiers (PAs) and transmitters should meet these challenges of high bandwidth and efficiency. This essentially requires innovations in the area of nonlinear design and characterization to develop new generation of PAs and transmitters. This workshop will focus on the new areas explored in non-linear vector analysis and its application in developing new strategies for enhancing the PA and transmitter design. This will particularly focus on non-linear device characterization and measurement challenges for catering to the needs of 5G communication standards. The workshop will focus on following key areas targeting the demands of 5G applications: (1) Broadband nonlinear measurements with NVNA and high efficiency PA design for handling wideband modulated signals with high crest factor. (2) Non-linear device characterization, modeling and PA design based on non-linear embedding and other novel techniques. (3) New digital schemes and architectures for developing non-linear behavioral model and linearization of broadband PA and wireless transmitters for 5G applications. In addition to the above key areas, this workshop will also address the challenges in developing new digital radio front ends and massive MIMO platforms for high speed data link and throughput. This workshop will bring together some of the leading world experts to present the novel measurement techniques and associated PA as well as linearized transmitter design schemes to cater to the upcoming needs of 5G communication.

Agenda:

  1. Power Amplifier Design Using Nonlinear Embedding: Waveform Engineering At The Current Generator Plane;
    Antonio Raffo – University of Ferrara, Italy; Dominique Schreurs – K.U. Leuven, Belgium
  2. Bandwidth And Efficiency Enhancement Schemes In Radio Frequency Power Amplifiers;
    Karun Rawat – Indian Institute of Technology Roorkee, India
  3. Systematic Design of High Efficiency Doherty and Outphasing PA from Load-Pull Data;
    Christian Fager – Chalmers Univ. of Technology, Sweden
  4. PA design using Simulation-Based Nonlinear-Embedding: Trust but Verify with NVNA Measurements;
    Patrick Roblin – Ohio State University, USA
  5. Linearization of Broadband PA and Wireless Transmitters for 5G Applications;
    Meenakshi Rawat – Indian Institute of Technology Roorkee, India
  6. New Approach For Active Devices Characterization Under Wideband Modulated Signals Within a Coherent Stimulus- Response Network Environment;
    Jean Pierre Teyssier – Keysight Technologies, USA
  7. Load Modulation Measurements of X-Band Outphasing Power Amplifiers;
    Zoya Popovic – University of Colorado, Boulder, USA
  8. Non-Linear Device Characterization And Modeling For Technology Development And Pa Design;
    Sonja Nedeljkovic – Broadcom, Fort Collins, USA

 

IMS 2019 WORKSHOPS

Measurement and Design Techniques for Next-Generation Communication Systems

Organizers:

Antonio Raffo, University of Ferrara;
Patrick Roblin, Ohio State University

Abstract:

The design of future communication systems poses several challenges in terms of required bandwidth, power, efficiency, and costs. The workshop aims at discussing how these challenges can be tackled by adopting skills and techniques that, although acquired by the microwave community, are still too fragmented. More specifically, the workshop will focus on measurements, which are a crucial step at each design level, from semiconductor devices to circuits and systems. Speakers will show how a deep understanding of the measurement quality is of critical importance and remains an unavoidable step for the design of the next-generation microwave circuits and systems. Emphasis will be placed on wideband measurements accounting for new modulation techniques. Finally, different examples of circuit and system designs oriented to 5G and IoT applications will be presented. It will be emphasized how simulations and measurements merge together in modern design techniques to give rise to first-pass design strategies.

Agenda:

  1. EVM and NPR definition and optimum measurement;
    Jacques Sombrin – TESA Laboratory, Toulouse
  2. On-wafer measurement uncertainty for estimating the performance of active RF circuits;
    Jérôme Chéron, Dylan Williams, Richard Chamberlin, Benjamin Jamroz – National Institute of Standards and Technology
  3. How to improve accuracy of wafer-level calibration at mm-Wave and sub-mm wave frequencies?;
    Andrej Rumiantsev – MPI Corporation
  4. GaN HEMT Characterization for High-Efficiency Power Amplifiers;
    Hiroshi Yamamoto – Sumitomo Electric Industries, Ltd.
  5. Wideband load-pull measurement techniques: architecture, accuracy, and applications;
    Gustavo Avolio and Mauro Marchetti – Anteverta-mw|Maury Microwave
  6. Behavioral Modeling Including Low-Frequency Dispersion Effects and Application to PA Design;
    Edouard Ngoya – XLIM-CNRS, University of Limoges, FR; Christophe Mazière – AMCAD Engineering, Inc, FR; Wissam Saabe – AMCAD Engineering, Inc, FR; Sebastien Mons – XLIM-CNRS, University of Limoges, FR
  7. Broadband PAs for Concurrent Signals;
    Taylor Barton and Zoya Popovic – University of Colorado, Boulder, USA
  8. Design of GaN based K/Ka-band MMIC Power Amplifiers;
    Paolo Colantonio, Rocco Giofrè, Franco Giannini – University of Rome Tor Vergata
  9. Linearization Implementation Challenges and Techniques for 5G Waveforms;
    Meenakshi Rawat – Indian Institute of Technology Roorkee

 

Measurement Challenges in Over-The-Air Testing

Organizers:

  1. Martens, Anritsu;
    N.B. Carvalho, Universidade de Aveiro

Abstract:

As radio integration proceeds apace for 5G, satellite and other applications, over-the-air testing requirements are increasing dramatically. This workshop covers topics related to both measurement fundamentals (spatial data fusion, calibration and synchronization concerns, traceability, etc.), to the structure and measurement requirements of the subsystems being analyzed and to more advanced topics (e.g., MIMO test beds, higher order measurements such as EVM). Even simple transmission phase measurements versus position/angle can be a challenge with disjoint frequency converters and path characteristics changing over the modulation bandwidth. Nonlinear characterization (including emulated load pull) is increasingly needed for the embedded power amplifiers in these systems. Some subsystems under test may employ multibeam scanning or element- level predistortion that require additional characterization considerations. Attendees at this workshop will hear some of the latest thinking in OTA measurements and procedures and how some recent changes in integrated radio/system designs will further influence the measurement landscape.

Agenda:

  1. Traceable mm-Wave Modulated-Signal Source for Over-The-Air Device Characterization;
    Robert D. Horansky – NIST
  2. Calibration, Synchronization and Sensitivity Topics in OTA Array Characterization;
    Jon Martens – Anritsu
  3. Multibeam Phase-Shifter-Less Antenna Arrays and Free-Space Measurements;
    Zoya Popović, University of Colorado Boulder
  4. Measurement Systems Fusion for Over-The-Air (OTA) Characterization of 5G Devices;
    Alejandro Buritica – National Instruments
  5. Metrological MIMO Testbeds for 5G Communications;
    Tian Hong Loh – NPL
  6. OTA Characterization of Nonlinear Transmitters Using Specially Designed Multi-Sines;
    Nuno Borges Carvalho – Universidade de Aveiro
  7. Over-The-Air Characterization and Prediction of Non-Linearity in mm-Wave Arrays;
    Koen Buisman – Chalmers Univ. of Technology
  8. Testing 5G PAs: from the Cable to OTA;
    Sérgio C. Pires – Ampleon