DOI: 10.1109/TMTT.2025.3569647   IEEEXplore: https://ieeexplore.ieee.org/document/11018800

III-V Lab InP-DHBT analog multiplexer (AMUX)-driver integrated circuits using TIS loading in their selecting core

Up to 200 GHz; up to 200 GBd

One iteration of the driver IC employes a novel DHBT epitaxial structure to improve device speed with a highly C-doped compositionally graded gallium indium arsenide (GaInAs) base with reduced thickness. The composite collector has been thinned, and contains a GaInAs spacer, a thin gallium indium arsenide phosphide (GaInAsP) layer, a highly doped InP doping plane, and a lightly doped InP layer. An In-rich and highly doped GaInAs is used in the emitter cap layer, Another iteration of the driver IC is optimized for a thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) to prove viability for very high symbol rate optical signals.

Next-gen metro/long-haul optical transceivers

Up to 200 GSa/S sampling rate; >2100 GHz gain-bandwidth product; > 85 Ghz 3dB E/O bandwidth when combined with a TFLN modulator while supporting 100 GBd, (200 Gb/s) and 2.4 Vppd PAM-4 optical signals for 0.55 FoM without DSP or cooling.