Design and Characterization of a 6-mW Cryogenic SiGe IC for Superconducting Qubit Readout

Design and Characterization of a 6-mW Cryogenic SiGe IC for Superconducting Qubit Readout

Abstract
DOI: 10.1109/TMTT.2024.3456111   IEEEXplore: https://ieeexplore.ieee.org/document/10684422    
Device
Cryogenically Cooled Superconducting Qubit Readout IC in 180 nm SiGe BiCMOS Technology
Spectrum
5-7 GHz
Novelty
The first reported cryogenically cooled SiGe BiCMOS readout integrated circuit (ROIC) to achieve better than 98% single-qubit readout fidelity experimentally, without the use of a HEMT LNA. The IC employs a local oscillator chopping approach to reduce the effects of LO–RF feedthrough.
Application
Fully integrated large-scale cryogenic qubit control systems
Performance
99.2% state 0, 98.0% state 1 readout fidelity when cooled at 4.2°K. 55-65 dB gain, -8 dB input return loss (IRL). 6 mW power consumption,