DOI: 10.1109/TMTT.2023.3267543   IEEEXplore: https://ieeexplore.ieee.org/document/10113229

Multipole GaN-on-Si SPDT Switch; 0.39 mm2 chip

Up to 30 GHz

The design uses the inductive parasitic effects of hybrid HEMT devices to produce two transmission poles that flatten the passband and improve in-band insertion loss and return loss. A 3rd transmission pole can be implemented with a two-element series-shunt switch topology.

Single antenna TDD applications for data exchange between devices.

1 dB Bandwidth up to 30 GHz with 0.5 dB Insertion Loss for up to 31 dBm Power Levels.