Active Broadband Termination for Distributed Amplifiers Using a 45-nm BiCMOS SOI Process

Active Broadband Termination for Distributed Amplifiers Using a 45-nm BiCMOS SOI Process

clockVolume: 73, Issue: 5, May 2025

authorJustin J. Kim

Active Broadband Termination for Distributed Amplifiers Using a 45-nm BiCMOS SOI Process

Abstract
DOI: 10.1109/TMTT.2024.3490257   IEEEXplore: https://ieeexplore.ieee.org/document/10750056
Device
Active tunable broadband termination for distributed amplifiers in 90 nm SiGe on 45nm BiCMOS SOI
Spectrum
150 GHz (D-band)
Novelty
A shunt transimpedance, actively-tuned broadband termination (ABT) stage simultaneously lowers gain ripple and noise figure for distributed amplifiers (DAs) compared to resistive termination performance.
Application
Broadband optical communication, multi-band wireless communication or radar systems in RF, microwave, and millimeter-wave frequency bands
Performance
25 dB average gain with 150 GHz BW, 7.8-dB NF at 122 GHz, and 14.9 dBm POUT output power; 105 Gbps at 18 GHz (64-QAM) with 5.2 dBm average output power and 6.0% EVM for a single-stage ABT DA.