DOI: 10.1109/TMTT.2024.3439653   IEEEXplore: https://ieeexplore.ieee.org/document/10644142    

A triple-band VCO with class-D oscillator biasing fabricated in standard 65-nm CMOS. A triple-band VCO with class-B oscillator biasing fabricated in standard 180-nm BiCMOS

19, 28, 36 GHz bands (K, Ka bands)

A dual path inductor switches between even and odd excitation modes determined by the differential excitation’s input polarity for coarse frequency control, changing the inductance by a factor of 4. A mode switching capacitor extends operation to an intermediate band between the low band and high band of the VCO.

Multiband operations with wide frequency separation for 5G or SATCOM wireless communications.

187.5 dBc/Hz peak figure of merit(FoM) at 19 GHz for class -D VCO; 9-13% fractional tuning ratio depending on band and VCO; −127.5 to −120.58 dBc/Hz phase noise at 10 MHz offset for the class-D VCO 5.3% DC-RF efficiency at 19 GHz (class-D), 3.1% at 18,5 GHz (class-B); 2.4-4.7 mW power consumption (class-D), 10.1-13.1 mW (class-B).