DOI: 10.1109/TMTT.2024.3473321   IEEEXplore: https://ieeexplore.ieee.org/document/10745132

mmW image rejection mixer (IRM) using a differential I/ Q network implemented in TSMC 65 nm CMOS

23.5 – 29.5 GHz

Multiple phase-error zeros (MPEZs) enhance image rejection performance. MPEZs are produced by adding an inductor to the bandpass I-Path network to produce a new phase zero and increase the bandwidth. Adding a capacitor to the low-pass Q-Path network improves the quadrature performance. A differential MPEZ I/Q network topology improves bandwidth performance and reduces amplitude errors. The added I-Path inductor serves to better match the I-Path's voltage gain to the Q path's voltage gain.

Next-gen / future-gen mmW transceiver up converters and down converters

>40 dB IRR (image rejection ratio) About 15 dB conversion gain (CG) with 5 dBm LO power; About -20 dBm IP1dB around−20 dBm, and −14.2 to−12.8 dBm IIP3; 108 mW power consumption, 0.525 mm2 chip area.