OI: 10.1109/TMTT.2025.3613881   IEEEXplore: https://ieeexplore.ieee.org/document/11215868    

A monolithic transmit/receive (T/R) frontend in 150-nm gallium-nitride (GaN) technology

6 –18 GHz

Top-down system-level co-design approach within a compact T/R MMIC. • State-of-the-art performance in European GaN-on-SiC technology. • An asymmetric T/R switch is co-designed with the LNA and HPA, optimizing broadband power transfer at the interfaces, layout footprint, and TX-RX isolation. • The switch’s RX path merges with the LNA input for improved compactness and sensitivity. • A single-side biasing architecture, defined from the outset, further minimizes footprint and TX–RX coupling.

Advanced next-generation active phased-array systems.

• >37.5 dBm TX output power (39.8 dBm average) • >13.5% TX PAE (19.4% average) • >21 dB RX gain (21.4 dB average) • <3.3 dB RX NF (3 dB average) • >36.6 dB TX–RX isolation (45.5 dB average)