A Compact 24–30-GHz GaN Front-End Module With Coupled-Resonator-Based Transmit/Receive Switch for 5G Millimeter-Wave Applications

A Compact 24–30-GHz GaN Front-End Module With Coupled-Resonator-Based Transmit/Receive Switch for 5G Millimeter-Wave Applications

clockVolume: 73, Issue: 4, April 2025

authorDingyuan Zeng

A Compact 24–30-GHz GaN Front-End Module With Coupled-Resonator-Based Transmit/Receive Switch for 5G Millimeter-Wave Applications

Abstract
DOI: 10.1109/TMTT.2025.3530435   IEEEXplore: https://ieeexplore.ieee.org/document/10857705
Device
Front-End Module with a Coupled-Resonator-Based Transmit/Receive Switch in 0.15 µm GaN-on-SiC HEMT Process
Spectrum
24–30-GHz
Novelty
The output matching network (OMN) of the power amplifier (PA) and the input matching network (IMN) of the low noise amplifier (LNA) are reused in the switch network co-design, enabling T/R switching and impedance transformation simultaneously.
Application
5G mm-wave applications.
Performance
>17 dB TX small-signal gain; 27.4– 29.5-dBm TX saturated Pout; 14.5%–17% saturated power-added efficiency (PAE). 21.9 dBm average Pout; −25 dB or better error vector magnitude (EVM); 4% average PAE. >18.5 dB RX small-signal gain; <4.4 dB noise figure (NF); 12 dBm OP1dB. 2.1 × 2.6 mm2 chip area.