DOI: 10.1109/TMTT.2023.3339017   IEEEXplore: https://ieeexplore.ieee.org/document/10352963

Balanced Darlington cell in InP distributed amplifier

3-230 GHz

The new Darlington cell design employs two diode-connected transistors inside the pair to balance the voltage and current of the main transistors, enhance the output voltage swing, and increase the output power. The new Darlington cell design exhibits higher input impedance and higher current gain for lower loss of input network and wider bandwidth.

Broadband instrumentation, high-speed optical communications, ultra-wideband radars and sensors.

13 dB average gain from 3-230 GHz with input and output return loss below 7 dB up to 220 GHz; 21.4-12.4 dBm output power from 10-220 GHz, 3-dB output power bandwidth from 10-160 GHz; 17.6 dBm max output 1dB compression point, 30.4 dBm 3rd order intercept point; 10.5% peak power-added efficiency at 70 GHz, 5.5% at 170 GHz.