This article details the design and characterization of a 320 GHz 6x6 detector array fabricated with 65 nm CMOS with the array pixels wirebonded together instead of being monolithically integrated. Each pixel consists of a loop antenna and a baseband chopper amplifier. Pixel performance achieves 120 kV/W voltage responsivity (RV) and 6 pW/√Hz noise-equivalent power (NEP) with the baseband amplifier. The array achieves 80 kV/W mean RV with 32 dB baseband gain and 9 pW/√Hz NEP. Each pixel measures 950 µm x 600 µm, and the array measures 6.5 mm x 3.5 mm. The array was demonstrated in a transmission-based imaging experiment.