Volume: 73, Issue: 2, February 2025
Anik Batabyal A 0.9-V 36% PAE Broadband Continuous Class-F CMOS mm-Wave Power Amplifier Using Novel Current-Mode Power Combiner
Abstract
DOI: 10.1109/TMTT.2024.3430011
IEEEXplore: https://ieeexplore.ieee.org/document/10608420
Device
Class F PA in 40-nm CMOS technology without a UTM layer
Spectrum
28-31 GHz, Ka band and 5G-NR FR2 bands
Novelty
A capacitive third harmonic termination to the drain impedance at the output stage of the PA allows for a lower self-resonance frequency (SRF) of the transformer in the output matching network. This approach to the matching network design allows for lateral coupling in the transformer of the output matching network which removes the requirement for an ultrathick top metal (UTM) layer. This design approach to the matching network also contributes significantly to improving power-added efficiency (PAE).
Application
Wireless 5G and satellite communications, close-range radars.
Performance
19.1 dB small-signal gain at 28 GHz; 15.9 dBm peak power out from 28 to 31 GHz; 28.3% 3-dB bandwidth;
36% PAE from 0.9V supply;
-32 dBc adjacent channel leakage ratio (ACLR);
-27 dB error vector magnitude (EVM) without digital predistortion for 64 QAM 5G-NR with 200MHz BW.