DOI: 10.1109/TMTT.2025.3629872   IEEEXplore: https://ieeexplore.ieee.org/document/11268368    

Ultra-wideband (UWB) and W-band high-efficiency stability and linearity-enhanced power amplifiers in 0.13 µm SiGe BiCMOS technology.

45 – 100 GHz

A metal–oxide–metal (MOM) capacitor-based enhancement technique improves the stability of the two PAs. An adaptive-bias circuit is proposed to improve the linearity of the two PAs. A three-conductor Marchand balun is utilized at the input port of the W-band PA to form a dual-LC tank, thus achieving wideband input matching. A transformer-based two-way differential current power combiner is adopted by both PAs to further enhance the output power. A compact power splitter is utilized between the last two stages to reduce the chip area.

Millimeter-wave (mm-Wave) wireless systems in communication, radar, and imaging applications.

For the UWB PA: 45 – 100 GHz 3dB BW; 30.6 dB peak gain at 94 GHz; 17 – 20 dBm saturated output power (Psat) from 62 to 100 GHz; 17.3% peak power added efficiency (PAE) at 92 GHz; 16.5 dBm peak output-referred 1dB compression point (OP1dB) at 92 GHz; -27.3 dB error vector magnitude (EVM) with 18-gb/s 64 QAM at 94 GHz. For the W-band PA: 80 – 97 GHz 3dB BW; 21.4 dB peak gain at 90 GHz; 17.1 – 20.1 dBm Psat from 76 to 100 GHz; 22.4% peak PAE at 94 GHz; 16.7 dBm peak OP1dB at 96 GHz; -29.6 dB EVM with 18-gb/s 64 QAM at 94 GHz.