DOI: 10.1109/TMTT.2023.3327478   IEEEXplore: https://ieeexplore.ieee.org/document/10308416

300 GHz band fundamental mixer in 60-nm InP high electron mobility transistor (HEMT) technology.

300 GHz band (220 GHz to 320 GHz)

1) A widely split frequency matching network with a resistive mixer achieves 100 GHz bandwidth (widest ever reported in the 300 GHz band); 2) Dual band transmission with LO leakage cancelling achieves a 240 Gbps system data rate (highest ever reported in the 300 GHz band).

100 GHz -6 dB RF bandwidth, -15 dB conversion gain, 60 dB LO leakage suppression, up to 168 Gbps data rate per band demonstrated, 240 Gbps data rate achieved with two widely separated bands.