![Newsletter August 2019 Issue](https://mtt.org/app/themes/mtt-redesigned/assets/images/default-thumbnail.jpg)
Newsletter August 2019 Issue
21 August 2019 Integrated GaAs Stacked-FET High-Power Amplifiers Stacking FETs in power amplifiers allows voltages higher than the breakdown voltage of a single transistor. Here is a procedure for designing such devices, producing a prototype three-transistor S-band GaAs stacked-FET with PAE over 40% at an output power of 20 W–more than twice the output power […]