Featured articles
![Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz](https://mtt.org/app/uploads/2024/04/Schottky-Barrier-Gate-Figure-1a-2a-500x400-1-392x314.jpg)
Volume: 34, Issue: 2, February 2024
Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz
by Emre Akso
Read more![Inverse Design of SIW Devices Based on the Internal Multiport Method](https://mtt.org/app/uploads/2024/04/Figure-1-500x400-3-392x314.jpg)
Volume: 34, Issue: 2, February 2024
Inverse Design of SIW Devices Based on the Internal Multiport Method
by Jinyue Zhang
Read more![A Linear Inductorless SiGe BiCMOS TIA With <2% THD for 64-GBaud Coherent Optical Receivers](https://mtt.org/app/uploads/2024/04/A-Linear-Inductorless-SiGe-BiCMOS-TIA-Figure-1-500x400-1-392x314.jpg)
Volume: 34, Issue: 2, February 2024
A Linear Inductorless SiGe BiCMOS TIA With <2% THD for 64-GBaud Coherent Optical Receivers
by Zhiyuan Cao
Read more![A 272–341-GHz Integrated Amplifier-Frequency-Doubler Chain in 65-nm CMOS](https://mtt.org/app/uploads/2023/10/Flyers500-×-400-px-392x314.jpg)
August 2023
A 272–341-GHz Integrated Amplifier-Frequency-Doubler Chain in 65-nm CMOS
by Jae-Sung Rieh
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