To-Po Wang (S’05–M’08-SM’15) was born in Taiwan in 1975. He received dual B. S. degrees in mechanical engineering and in electrical engineering from National Sun Yai-Sen University, Kaohsiung, Taiwan, in 1998, the M. S. degree in communication engineering from National Chiao Tung University, Hsinchu, Taiwan, in 2000, and Ph. D. degree in communication engineering from National Taiwan University, Taipei, Taiwan, in 2007. From 2000 to 2003, he was with the BENQ Corporation, Taipei, Taiwan, where he was engaged in mobile phone research. Since 2007, he was with ITE Corporation, Taipei, Taiwan, where he was a Senior Engineer responsible for low-power and RF integrated circuits designs. In February 2009, he joined the faculty of the Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan. Currently, he is a Professor.
His recently research interests are in the areas of RF and millimeter-wave integrated circuits (ICs) in CMOS, SiGe BiCMOS, and compound semiconductor technologies. He was the award chair of 2018 The 7 th International Symposium on Next-Generation Electronics (2018 ISNE), the general secretary of 2017 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-Taiwan), the session chairs of 2017 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-Taiwan), the 2012 IEEE Topic Meeting on Silicon Monolithic Integrated Circuits in RF System (2012 SiRF), the 2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS), and the 2012 IEEE International Conference on Electron Devices and Solid-State Circuits (IEEE EDSSC). He has served as a reviewer of numerous publications, including the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, the IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, the IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-I: REGULAR PAPERS, the IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-II: EXPRESS BRIEFS, and the IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS AND FREQUENCY CONTROL. He was the recipient of the Best Paper Award of the Symposium on Nano Device Technology (SNDT) in 2012.