Ko-Tao Lee is a Senior Manager of R&D at Qorvo, where he is leading the Process Architecture and Device Development group to develop next generation RF devices and technologies. His research interests focus on the compound semiconductor devices for high frequency and high power applications. Dr. Lee received his B.S. degree from National Chiao-Tung University, his M.S. from National Central University, and the Ph.D. in electronic engineering from National Tsing Hua University, Hsinchu, Taiwan in 2011. Before joining Qorvo, he was with IBM T.J. Watson Research Center and Northrop Grumman. He spearheaded the development and maturation of GaN mmWave technology, GaN power devices, GaAs HBT, and heterogeneous integration of III-V/Si. Dr. Lee was responsible for driving multiple R&D projects, which resulted in more than 35 granted patents for his inventions.