Ko-Tao Lee is a Senior Manager of R&D at Qorvo, where he is leading the Process Architecture and Device Development group to develop next generation RF devices and technologies. His research interests focus on the compound semiconductor devices for high frequency and high power applications, including GaN mm-wave technology, GaN power devices, GaAs HBT, and heterogeneous integration of III-V/Si. Dr. Lee received his B.S. degree from National Chiao-Tung University, his M.S. from National Central University, and the Ph.D. in electronic engineering from National Tsing Hua University, Hsinchu, Taiwan in 2011. Before joining Qorvo, he was with IBM T. J. Watson Research Center and Northrop Grumman. His experience spans scientific research, technology maturation, and product qualification. He was responsible for driving multiple R&D projects, which resulted in more than 30 granted patents for his inventions. Dr. Lee is a senior member of IEEE, and he currently serves the Microwave Theory and Technology Society as a technical committee member.