Kazutaka Inoue received the M.S. degree in material physics from Osaka University, Osaka, Japan, in
1993. He joined Fujitsu Ltd., Kawasaki, Japan in 1993. From 2004 to 2009, he was with Eudyna Devices
Inc., Yamanashi, Japan, where he was involved in GaN HEMT development. Since he has been with
Sumitomo Electric Device Innovations,Inc. He is the department head of GaN HEMT device development
division. His current research interests are the design, fabrication and analysis of GaN HEMT devices for
high frequency operation, especially transient phenomena analysis and elimination.