Guillaume Callet was born in Arles, France, in 1983. He obtained engineering degree from ENSEA (Ecole Nationale Suprieure d’Electronique et de ses Applications) in 2008. In 2011 he graduated Ph.D. degree from Limoges University on the development of AlInN/GaN technology, particularly on the modeling of power devices, in the common laboratory between Xlim and Alcatel-Thales III–V Lab, MITIC.
He joined United Monolithic Semiconductors (UMS – Paris) in 2011 to work as Foundry Engineer to support external designers to realize their MMICs based on UMS’s 0.25µm GaN proprietary technology. In 2016 he joined the Technology & Modeling team to support the process developpment of next generation of GaN based technology.