Guillaume Callet was born in Arles, France, in 1983. He obtained the engineering degree from ENSEA (Ecole Nationale Supérieure d’Electronique et de ses Applications) in 2008. In 2011 he graduated the Ph.D. degree from Limoges University on the development of AlInN/GaN technology, particularly on the modeling of power RF devices, in the common laboratory between Xlim and Alcatel-Thales III–V Lab, MITIC. He joined United Monolithic Semiconductors (UMS – Paris) in 2011 as Foundry project manager following GaN based MMIC designs, process and characterization for external customers. In 2016 he joined the Technology and Modeling team to support the process development of the next generation of GaN transistors. In 2022 he joined Mitsubishi Electric Europe (Ratingen) as Field Application Engineer to support European customers using GaN based power amplifier solutions.