Farid Medjdoub is a CNRS senior scientist and leads the wide bandgap activities at IEMN in France since 2014. He received his Ph.D. in Electrical engineering from the University of Lille in 2004. Then, he moved to the University of Ulm in Germany as a research associate before joining IMEC as a senior scientist in 2008. Multiple state-of-the-art results have been realized in the frame of his work. Among others, world record thermal stability up to 1000°C for a field effect transistor, best combination of cut-off frequency / breakdown voltage or highest lateral GaN-on-silicon breakdown voltage using a local substrate removal have been achieved.
His research interests are the design, the fabrication, and characterization of innovative GaN-based devices. He is author and co-author of more than 130 papers in this field. He holds several patents deriving from his research. He serves as an Editor for Superlattices and Microstructures journal. He is also a reviewer for various journals and is a TPC member in several conferences. He will be chairing the EuMiC conference within EuMW 2019 that will held in Paris. He is part of the H2020 review panel for the wide bandgap specific calls. Starting from 2019, he will be leading the Nitride power activities within the national French network called GaNex.
Areas of expertise with the MTT-9 field:
- Active devices
- Wide bandgaps