Brian Markman is an R&D Engineer at Intel Corporation. Previously he was an Integration Engineer at Keysight Technologies, where he was responsible for a 0.5μm InP HBT platform. His research interests are Si CMOS for digital logic and III-V RF devices for high frequency applications. Dr. Markman received his B.S. degree in Materials Science & Engineering from Pennsylvania State University and his M.S. / Ph.D. in Electrical and Computer Engineering from University of California, Santa Barbara (UCSB) in 2020. At UCSB, he contributed to monolithic heterogenous integration development, InP-based tunneling field effect transistors, and InP-based MOS-HEMT technologies for 6G communication systems.