VCO Design With Uniformly Low Phase Noise Versus Frequency and Temperature for D-Band Applications
Abstract
DOI: 10.1109/TMTT.2024.3397463
IEEEXplore: https://ieeexplore.ieee.org/document/10530421
Device
VCO with Push-Pull Doubler, and VCO with Gilbert Cell Mixer Doubler, both in 130-nm SiGe BiCMOS with ft / fmax of 250/370 GHz
Spectrum
140 GHz (D-Band)
Novelty
Negative impedance ratio of ZFres/Zmin related to the transmission line lengths in the design was chosen to optimize phase noise performance over temperature.
Application
Communications, test and measurement, and radar and sensing in industrial and automotive environments.
Performance
13 GHz tuning range; 132 mW PCD. PN varies about 3.5 dB from -25 °C to +150 °C
VCO1 Colpitts core with the push-pull doubler exhibited remarkably low phase noise over its tuning range. -1.3 dBm Pout; -98.7 dBc/Hz PN MHz).
VCO2 Colpitts core with the Gilbert cell mixer doubler exhibited remarkably flat low phase noise over its tuning range. -8 dBm Pout; -95 dBc/Hz (1 MHz).