Recent Advances in Integrated mm-Wave Power Amplifiers for 5G and Beyond

Recent Advances in Integrated mm-Wave Power Amplifiers for 5G and Beyond

Abstract

5G and beyond PA applications push the performance of CMOS, SOI, SiGe, GaAs, GaN and InP semiconductors for operating frequency, output power and efficiency. SiGe HBT PAs currently find a sweet spot with 5G NR and Ka-band PA applications with broad bandwidth, high efficiency and good linearity at output power levels typically required. The III-V technologies such as GaAs and GaN with higher breakdown voltage characteristics shine in high output power applications compared to silicon devices; however, their physically larger size significantly hampers their integration into large antenna arrays. No one technology delivers the "super" PA that satisfies all design specifications.

https://ieeexplore.ieee.org/document/10744815