DOI: 10.1109/TMTT.2025.3556982   IEEEXplore: https://ieeexplore.ieee.org/document/10969553    

Pulse-operated cryogenic InP high electron mobility transistor (HEMT) low noise amplifier (LNA) for qubit readout applications

3 – 9 GHz

A pulsed gate voltage significantly reduces power consumption and thermal noise contribution for the InP HEMT LNA to reduce errors in a qubit readout application. Genetic algorithm (GA) techniques were applied to determine the optimum gate voltage waveform for the LNA for enhanced transient noise and gain performance. A 5.0 µs pulse period with 10% duty cycle (0.5 µs pulse) achieved the required 35 ns recovery time for qubit readout.

High-performance low power amplifier solutions for large-scale qubit readout applications.

120 ns effective recovery time with a 130 ns delay for a 5 µs periodic square wave with 50% duty cycle. 35 ns effective recovery time with a 130 ns delay for a 5 µs periodic pulse wave with a 10% duty cycle. 1.69 K Te , 0.23 K Te standard deviation (SD), 44.53 dB gain at 5 GHz averaged in the time domain over 3000 repetitions for the 10% duty cycle waveform. Optimized waveform power consumption was reduced to 13.9% of continuous power consumption.