DOI: 10.1109/TMTT.2024.3443607   IEEEXplore: https://ieeexplore.ieee.org/document/10647218    

MMIC high-power amplifier (HPA) in 100-nm GaN/Si technology

35-36 GHz (Ka-band)

Thermal modeling and design considerations determine the device selection and optimum bias points for input and output devices to assure ≤ 160° C junction temperature for space applications. The final stage output combiner and matching network design minimizes losses and sensitivity to process variations for 16 final stage devices.

Space synthetic aperture radar (SAR) altimetry applications.

38 dBm Pout at 20 dB gain, 19% power-added efficiency (PAE), 1.0 W/mm Pout density, space-rated for ≤160° C maximum junction temperature. 40 dBm Pout at 22 dB gain, 20% PAE, 1.6 W/mm Pout density .