DOI: 10.1109/TMTT.2024.3492327   IEEEXplore: https://ieeexplore.ieee.org/document/10750836    

An RF isolated gate driver with high common-mode transient immunity (CMTI) and high switching speed accomplished by simultaneous wireless information and power transfer (SWIPT) and a harmonic backscattering RF application demonstrated with an eGaN-FET high power semiconductor switch.

2.4 – 2.5 GHz f0 for wireless power,2f0 harmonic signal at 4.8 – 5 GHz for backscatter RF.

A radio frequency gate driver (RFGD) utilizing a single radio frequency coupling channel simultaneously provides both sufficient power and a high speed switching signal wirelessly (a SWIPT application) with high common mode transient immunity (CMTI) comparable to bulky and lossy magnetically coupled DC-DC converter approaches for power and photonic or capacitive coupling approaches for the switching signal.

High power semiconductor switches.

> 6.4 kV/µs CMTI measured for 84 VD, 8.2 ns rise time; the maximum CMTI has not been determined and depends on the RF isolator.