DOI: 10.1109/TMTT.2024.3385713   IEEEXplore: https://ieeexplore.ieee.org/document/10507180

Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology with 120-GHz Bandwidth, >20-dBm Pout and <6-dB Noise-Figure

2-129 GHz

Bias condition, primarily the drain current, optimizes the tradeoff between NF, AIP3, Gt and Psat. Total gate width (TGW) choice optimizes the tradeoff between achievable gain and bandwidth. Resistive gate and drain-line terminations optimize reflections at the end of the gate and drain ATLs.

Wireless communications and measurement equipment.

2 – 129 GHz 3 dB bandwidth 17.9 – 20.2 dBm Pout 1-dB compression from 2–110 GHz, 20.6 – 22.8 dBm Pout Saturated 6.7 dB average forward gain, 3.1 – 5.7 dB noise figure (2–110 GHz) 26.8 – 19.8 dBm output-referred 3rd order intermodulation point (OIP3)