Tushar Sharma received his Ph.D. degree from the University of Calgary, Alberta, Canada in 2018 with focus on the of high-efficiency gallium nitride technology characterization and design of power amplifier architectures for 5G base station applications. Thereafter, he joined as a post-doctoral research associate at the Integrated Microsystems Research Lab at Princeton University, NJ, USA, where he was involved in exploring the novel reconfigurable techniques in RF and mm-Wave transmitters (30-100 GHz) for 5G and beyond.
In 2016, he joined RF power group of NXP Semiconductors, Chandler, AZ, USA, as a research and development engineer to steer the GaN technology evaluation and pursue product development using advanced harmonic tuned classes, waveform shaping, and large-signal device modelling to support NXP’s Technology and Innovations business line. His research areas include mm-wave (30–100 GHz) advanced transmitter architectures in CMOS, GaN, InP, high-power (50–300-W) broadband amplifiers for cellular infrastructure, passive/active load-pull techniques for device characterization, and waveform engineering. Dr Sharma is a recipient of the Izaak Walton Killam Pre-Doctoral Scholarship, the Alberta Science and Innovation Under 30 Future Leader Award, the Alberta Innovates Technology Future Doctoral Scholarship, the Alberta Transformative Talent Scholarship, IEEE Education Activity Board Pre Educator award, IEEE MGA Young Professionals Achievement Award and University of Calgary 2018 Early Achievement Alumni Award. He has authored or coauthored over 35 refereed publications and holds 3 US patents—awarded or pending.