Simona Donati Guerrieri

Simona Donati Guerrieri (M’97) received the Laurea degree in Physics from the University of Milano, Italy, in 1993 and the PhD in Electron Devices from University of Trento, Italy, in 1999. In 1995 she joined the Electronics Department, Politecnico di Torino, Italy, where she is currently Associate Professor. Between 1996 and 2000, she has been Visiting researcher at the Institut d’Electronique e de Microelectronique du Nord (IEMN) in Lille, (France) and at the ULSI Department Bell Laboratories, Murray Hill, New Jersey (USA) working on HEMT and MOS noise modelling.

Her research focuses on modelling of microwave solid state devices, including physics-based numerical simulation through Harmonic Balance TCAD, behavioural and compact models, innovative numerical approaches to nonlinear stability and noise analyses, efficient statistical analysis and design-technology co-optimization. Her expertise also includes the design of high efficiency microwave power amplifiers both on GaAs and GaN technologies.

Simona Donati Guerrieri authored or coauthored more than 100 publications (8 invited) in refereed journals and conferences and contributed a book chapter to “RF Power Amplifier Behavioral Modeling” (Cambridge University Press 2010). She also co-authored the entry “Harmonic Balance Simulation And Analysis” in the Wiley IEEE Encyclopedia (1999).

Prof. Donati Guerrieri serves as reviewer for many scientific publications, including IEEE Transactions on Microwave Theory and Techniques, IEEE Microwave and Wireless Technology Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, International Journal of RF and Microwave Computer-Aided Engineering, and International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. She is a member of the Technical Program Reviewers Committee of the IEEE MTT-S RF Technology & Techniques (RFTT) Symposium, and she is in the Reviewer Panel of the European Microwave Conference.