Shang-Lin Weng (M’89) received : Ph.D. degree in surface physics from the University of Pennsylvania in 1978. He was born in Taiwan in 1949 and received the B.S. degree in 1971 from the Physics Department of National Taiwan University. In 1978 he joined Bell Laboratories (Murray Hill, NJ) as a Postdoctoral Member of Technical Staff to study surface science. In 1979 he went on to Brookhaven National Laboratory to continue his research in surface physics as a Staff Physicist. In 1983 he joined the Varian Research Center as a Senior Engineer to study molecular beam epitaxy (MBE) of 111-V compound semiconductors and its application in microwave devices and circuits. In January 1990 he joined Varian MBE Equipment Operations as the Applications Lab Manager and has since been in charge of all research activities related to the advancement of MBE materials, equipment development, and marketing support. Dr. Weng received the Wayne. B. Nottingham Prize in 1977 for his work in surface physics. He has published more than 35 papers in a variety of refereed journals and has received one patent. He is currently a member of the American Physical Society, the American Vacuum Society, and the Materials Research Society.