Paragkumar Thadesar

Parag’s research interest is mainly at the intersection of RF packaging, circuits and device technologies. He received M.S. and PhD degrees in electrical and computer engineering from Georgia Tech, Atlanta in 2011 and 2015, respectively. His PhD research was mainly focused on low loss through-silicon via (TSV) technologies for silicon interposer packaging. Since 2015, Parag has been at Qualcomm, where his main contribution is in the design of RF front-end modules and power amplifiers, and patenting innovative RF packaging techniques. Additionally, Parag has also been an Associate Editor for the IEEE TCPMT journal, an Editor for the IEEE TED journal and a chapter chair for the San Diego EPS chapter.