Keisuke Shinohara was born in Kagawa, Japan, in 1971. He received the B.E., M.E., and the Ph.D. degrees in solid state physics from Osaka University, Japan, in 1994, 1996, and 1998, respectively. In 2014, he joined Teledyne Scientific & Imaging, where he conducts research and development on III-V devices for RF, mixed signal, and power electronics applications. Prior to joining Teledyne, he worked at Communications Research Laboratory in Tokyo, Japan between 1999 and 2004, Rockwell Scientific Company between 2004 and 2008, and HRL Laboratories between 2008 and 2014, where he has developed highly-scaled HEMTs, HBTs and Schottky diodes based on InP and GaN material systems. He has authored or coauthored more than 100 publications and conference contributions. Dr. Shinohara is a senior member of the IEEE. He served on the TPC of the IEEE IEDM in 2013 and 2014, the IEEE International Conference on Indium Phosphide and Related Materials (IPRM) in 2005, 2010-2013, and 2016, and the Lester Eastman Conference (LEC) in 2016.