Kaznhiko Honjo was born in Saitama, Japan, on October 28, 1951. He received the B.E. degree from the University of Electro-communications, Tokyo, Japan, in 1974. He received the M.E, and the D.E. degrees in electronics engineering, from the Tokyo Institute of Technology, Tokyo, Japan, in 1976 and 1983, respectively. He joined the Central Research Laboratories, NEC Corporation, Kawasaki, Japan, in 1976. He has been involved in the research and development of microwave-power GaAs FET amplifiers, GSAS MMIC’S, and is presently concerned with AIGaAs/GaAs hetero-junction bipolar transistors. He is presently the Supervisor of the Ultra-high-speed Device Research Laboratory, NEC. Dr. Honjo is a corecipient of the 1983 Microwave Prize granted by the MTT Society. He also received the Young Engineer Award from the Institute of Electronics and Communication Engineers of Japan in 1980.