Katherine J. Herrick earned her B.S.E., M.S.E., and Ph.D. degrees in electrical engineering from the University of Michigan, Ann Arbor, in 1994, 1996, and 2000, respectively. Her dissertation work focused on integrated three dimensional (3-D) microwave circuits up to W-band utilizing silicon micromachining. Upon completing her Ph.D., Dr. Herrick conducted research as a postdoctoral research fellow in the areas of packaged MEMS and multilayer silicon circuits. She joined Raytheon’s Advanced Technology Department at Raytheon RF Components in Andover, Massachusetts, in January 2001. There she focused on advanced solid-state research and program development in GaAs-based metamorphic high electron mobility transistor (MHEMT) technology, high-performance passive interconnects, 3-D packaging, microwave circuit design, and integrated arrays through 110 GHz. Dr. Herrick joined Raytheon’s Integrated Defense Systems Advanced Technology Directorate in January 2007 with a focus on microelectronics contract R&D capture. She led the capture of, and is currently Raytheon’s principal investigator for, the DARPA COSMOS (Compound Semiconductor Materials on Silicon) program. Raytheon’s COSMOS approach is to directly grow a compound semiconductor on a uniquely engineered silicon substrate. The goal is to integrate highperformance compound semiconductors with low-cost commercial complementary metaloxide semiconductor (CMOS) silicon wafers to achieve superior cost-benefit performance compared with either technology on its own. Dr. Herrick received the Raytheon Company Integrated Defense Systems President’s Award in 2007 and the Outstanding Technical Contribution Award in 2003.
Dr. Herrick has been a member of the IEEE and the MTT-S for over 15 years. She won the IMS Best Student Paper awards in both 2000 (third) and 1997 (first). She has published over 35 technical papers and holds several patents in the areas of antennas, RF MEMS packaging, and microwave circuits.