Fred van Rijs received the Ph.D. degree in electrical engineering (cum laude) from the Technical University of Delft, Delft, The Netherlands, in 1992. In 1992, he joined Philips Research Laboratories, Eindhoven, The Netherlands, where he was involved with advanced silicon technologies and demonstrated successfully silicon double-poly bipolar technology for power amplifiers for cellular showing record-level power-added efficiency. In 1999, he joined Philips Semiconductors, Nijmegen, The Netherlands, where he was with the Innovation Group for three years working on CATV initiating pHEMT technology for the next generation of CATV power amplifiers. After that, for three and one-half years, he was involved with power transistors for base stations and was responsible for the development of LDMOS technology. In 2005, he joined the Innovation Center RF, where he is currently involved with low-distortion GaAs–AlGaAs HFETs and GaN. He has authored or coauthored over 20 technical papers.