Farid Medjdoub

Farid Medjdoub is a CNRS senior scientist at IEMN, Univ. Lille, France, where he leads research activities on wide-bandgap semiconductor devices. He received the Ph.D. degree in electrical engineering from the University of Lille in 2004. He subsequently held research positions at Ulm University, Germany, and at IMEC, where he served as a senior scientist.

His research focuses on the design, fabrication, and characterization of innovative GaN-based devices, with particular emphasis on active devices, semiconductor technologies, and wide-bandgap materials. His work has led to several significant advances in the field, including high-temperature device operation, high-breakdown-voltage GaN-on-silicon technologies, and advanced device concepts for microwave, millimeter-wave, and power applications.

Dr. Medjdoub has authored and co-authored more than 250 papers and holds several patents arising from his research. He is actively engaged in the scientific community through editorial, reviewing, and technical program committee activities. He currently serves as Vice-Chair of IEEE MTT-S Technical Committee TC-9, Microwave and Millimeter-Wave Solid-State Devices.