Fabian Thome

Fabian Thome received the Dipl.-Ing. degree in electrical engineering and information technologies from the Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany, in 2011 and the Ph.D. degree in the field of semiconductor devices and wireless communication from the University of Freiburg, Freiburg im Breisgau, Germany, in 2020. In 2010, he joined the Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg im Breisgau, Germany, where he has been a Senior Research Scientist and a Project Manager. Since 2023, he has been the Head of the System-Oriented RF Circuits Group and Deputy Head of the High Frequency Electronics Business Unit. His current research interests include the development of InGaAs and GaN HEMT technologies as well as the design and characterization of linear and nonlinear semiconductor devices and monolithic microwave integrated circuits from the microwave to submillimeter-wave frequency range for applications in radio astronomy, space, measurement and sensing equipment, wireless communications, and quantum computing. Dr. Thome was a recipient of the 2023 IEEE Microwave and Wireless Technology Letters Tatsou Itoh Award. In 2024, Dr. Thome received the Advanced Practice Paper Award at IMS2024.