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Workshop on June 15th, 2025
WSG: RFIC Architectures, Circuits and Systems for LEO SATCOM Broadband Access for 6G NTN
Organizers: Didier Belot (STMicroclectonics)/ Pierre Busson (STMicroclectonics)/ Salvatore Finocchiaro (Qorvo)
In the context of 6G and beyond, the performance demands are geared towards massive parallelization. For instance, the Non-Terrestrial-Network (NTN) is an essential component of future 6G wireless systems, and the next-generation SATCOM network will play an enabling role to support 6G NTN. High throughput, capacity, and low latency, and beamformed wireless links are the key success factors for NTN. Most existing SATCOM terminals, either on the ground or on the satellite payload, require large-sized phased array systems with 1024 elements or more per array. Such massive parallelization results in significant challenges not only in terms of integration density, but also on calibration and practical operation; a particularly challenging task in SATCOM-on-the-Move (SOTM) systems that necessitate fast beam forming and tracking. In this WS we will have an overview of potential process/circuit/system solutions addressing these challenges.
Workshop on June 16th, 2025
WMK: Next-Generation Devices: Where Do Ultra-Wide Bandgap Semiconductors Fit In?
Organizers: Spyridon Pavlidis (North Carolina State Univ)/ Farid Medjdoub (IEMN (UMR 8520))/ Andrea Arias-Purdue (HRL Laboratories)
Predictions based on popular figures of merit, such as the Johnson Figure of Merit (JFOM) and Baliga Figure of Merit (BFOM), have motivated the development of wide bandgap semiconductors (WBGSs) for RF and power electronics. In recent years, the rapid adoption of gallium nitride (GaN) and silicon carbide (SiC) demonstrates that investments in these technologies is indeed paying off. Thus, it is natural to look ahead and ask if even better performance can be obtained from devices based on emerging ultra-wide bandgap semiconductors (UWBGSs). While the above mentioned FOMs indicate that these UWBGSs could outperform today’s WBGS devices, there remain technological hurdles at all levels: from substrates and epitaxy, to contacts and passivation. This workshop brings together international experts currently investigating these topics to discuss the state-of-the-art of UWBGS III-Nitride (AlGaN, AlN), gallium oxide and diamond devices for RF and power electronics. In addition to covering the use of UWBGSs as a channel material, the use of these materials as substrates and thermal management solutions will also be examined, with the overarching goal of exploring how to best use UWBGS in next-generation electronic devices. The workshop will conclude with a round table session to invite audience participation and interaction with the speakers.