This letter reports on Schottky barrier (SB) gate N-Polar GaN-on-sapphire deep recess high-electron-mobility transistors (HEMTs). The vertical gate scaling of the SB transistors deliver superior large signal performance with significant gain and efficiency improvements compared to other devices. Measured performance is 10.5 dB linear gain with 50.2% peak (PAE) power-added efficiency at 2.8 W/mm output power, and 6.1 dB compressed gain with 46,3% PAE at 3.2W/mm output power at 94 GHz. The outstanding performance and low cost of GaN-on-Sapphire SB devices are very attractive for high efficiency next-gen wireless communication applications.