This letter presents a silicon–germanium (SiGe) frequency quadrupler with high conversion gain and broad bandwidth leveraging a gain-enhanced cascode bootstrapped Gilbert cell (BSGC) cascaded with a push–push (PP) doubler topology. This novel hybrid architecture provides an excellent tradeoff in conversion gain, output power, and bandwidth at mm-Wave. The quadrupler was demonstrated in a 90-nm SiGe BiCMOS process technology and achieves 10.2 dB of conversion gain and 2 dBm of output power across a 27% 3-dB bandwidth of 163–214 GHz. This design achieves a state-of-the-art conversion gain–bandwidth (CGBW) product of 161.3 GHz, the highest reported to date among silicon-based frequency quadruplers operating around 200 GHz.

DOI: 10.1109/LMWT.2025.3623563   IEEEXplore: https://ieeexplore.ieee.org/abstract/document/11219425